| PART |
Description |
Maker |
| BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| CA3086M96 CA3086 |
NPN Transistor Array, DC to 190MHz, General Purpose
General Purpose NPN Transistor Array
|
INTERSIL[Intersil Corporation]
|
| CTA2N1P-7-F |
COMPLEX TRANSISTOR ARRAY 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BCM846S07 |
NPN Silicon AF Transistor Array
|
Infineon Technologies AG
|
| SMBTA06U |
NPN Silicon AF Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCM846S |
NPN Silicon AF Transistor Array
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BCR42PN |
NPN/PNP Silicon Digital Transistor Array(NPN/PNP硅数字晶体管阵列) npn进步党硅数字晶体管阵列（npn进步党硅数字晶体管阵列）
|
SIEMENS AG
|
| UPA53C |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY
|
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