| PART |
Description |
Maker |
| K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R881869D K4R571669D |
256/288Mbit RDRAM(D-die)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets]
OKI electronic components
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| MB814953 |
4.5 MBit RDRAM
|
Fujitsu Microelectronics
|
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| HTCICC6402FUG HTCICC6403FUG |
HITAG RO64 Transponder IC
HTCICC64; HITAG RO64 transponder IC HTCICC6402FUG/AM<Uncased die|<<<1<Always Pb-free,;HTCICC6403FUG/AM<Uncased die|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
