| PART |
Description |
Maker |
| DP5Z1MW32PV3-12M DP5Z1MW32PV3-20M DP5Z1MW32PV3-15M |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Air Cost Control
Linear Technology, Corp.
Vicor, Corp.
|
| DPZ64X32VS-12B DPZ64X32VS-12C DPZ64X32VS-12I DPZ64 |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Micro Commercial Components, Corp.
ZETTLER electronics GmbH
Cypress Semiconductor, Corp.
Fujitsu, Ltd.
|
| PUMA2E4001I-17 PUMA2E4001-17 PUMA2E4001M-17 |
x32 EEPROM Module X32号的EEPROM模块
|
Rohm Co., Ltd.
|
| AS8E128K32Q-15/IT AS8E128K32Q-15/XT AS8E128K32Q-25 |
x32 EEPROM Module X32号的EEPROM模块
|
Maxim Integrated Products, Inc.
Advanced Analogic Technologies, Inc.
TE Connectivity, Ltd.
NXP Semiconductors N.V.
|
| PUMA67F16000I-25 PUMA67F16000M-15 PUMA67F16000M-20 |
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
250NS, PGA,883C; LEVEL B FULLY COMPLIANT(EEPROM)
200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
150NS, PDIP, IND TEMP(EEPROM)
150NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
NXP Semiconductors N.V.
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| AT49F1614 AT49F1604T-70CI AT49F1604T-70CC |
x16 Flash EEPROM
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,BGA,48PIN,PLASTIC
|
Atmel
|
| WF128K32-50H1C5A WF128K32-50G2UC5 WF128K32-50G1TI5 |
EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC
EEPROM|FLASH|128KX32|CMOS|PGA|66PIN|CERAMIC
EEPROM EEPROM
|
Aeroflex, Inc.
|
| W49F102Q-45 W49F102P-45 |
EEPROM|FLASH|64KX16|CMOS|TSSOP|40PIN|PLASTIC
EEPROM|FLASH|64KX16|CMOS|LDCC|44PIN|PLASTIC
64K X 16 FLASH 5V PROM, 45 ns, PDSO40
|
WINBOND ELECTRONICS CORP
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| AT89LS8252 AT89S8252 |
Low Voltage, Downloadable MCU with 8K bytes Flash and 2K bytes EEPROM.
In-System Programmable Microcontroller with 8K bytes Flash & 2K bytes EEPROM
|
Atmel
|
