| PART |
Description |
Maker |
| 2N4402 2N4403 ON0046 2N4403RLRE |
General Purpose Transistors PNP
General Purpose Transistors(PNP Silicon)
Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BC327-16 BC328-16 BC327 BC327-25 BC327-40 BC328-40 |
Si-Epitaxial PlanarTransistors 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
Amplifier Transistors(PNP)
PNP general purpose transistor
|
KEC(Korea Electronics)
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Motorola Inc
Philips Semiconductors
|
| B120NH03L 2SA1020G 2SA1020RLRA 2SA1020RLRAG 2SA177 |
N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion
One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
PNP Silicon General Purpose Amplifier Transistor
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
Low-Voltage 1.8/2.5/3.3 V 8-Bit Transceiver
Switching Diode
MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Low?Voltage 1.8/2.5/3.3V 16?Bit Transparent Latch
8?Bit Bus Switch
Low?Voltage 1.8/2.5/3.3V 16?Bit Transceiver
|
STMICROELECTRONICS
ZETEX
ONSEMI[ON Semiconductor]
|
| JC557 JC556_557_558_3 JC556 JC556B JC557B JC558 JC |
PNP general purpose transistors
From old datasheet system
PNP general purpose transistor(PNP通用型晶体管)
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MBT3906DW |
Dual General Purpose Transistor PNP PNP Silicon
|
ETC[ETC]
|
| HN1A01FU E001966 |
Silicon PNP Transistor
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
N/A
Toshiba Semiconductor
|
| CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
|
Continental Device India Limited
CDIL
Continental Device India, Ltd.
|
| 2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon PNP Transistor
Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
| 1N482B FTSO5139 FTSO5138 1N462A |
General purpose low leakage diode. Working inverse voltage 36V.
PNP small signal general purpose amplifier & switch.
PNP low level amplifier.
General purpose high conductance diode. Working inverse voltage 60V.
|
Fairchild Semiconductor
|
| CD9012 CD9012J CD9012D CD9012E CD9012F CD9012G CD9 |
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
PNP SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| LBC858CWT1 LBC856AWT1 LBC856BWT1 LBC857AWT1 LBC857 |
General Purpose Transistors PNP Silicon
|
LRC[Leshan Radio Company]
|
| L9015SLT1G L9015LT1 L9015QLT1 L9015QLT1G L9015RLT1 |
General Purpose Transistors PNP Silicon
|
LRC[Leshan Radio Company]
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