| PART |
Description |
Maker |
| IS64LV51216-12TLA3 IS64LV51216-12TA3 IS61LV51216-1 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| P4C1049-15FS36C P4C1049-15FS36I P4C1049-15FS36M P4 |
HIGH SPEED 512K x 8 STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| LY615128ML LY615128MV LY615128UL LY615128UV |
5V 512K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| 29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125
Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC
High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125
; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8，统一座低电压单电源闪
CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，统一座低电压单电源闪
CAP RF 27PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 24PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 22PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
CAP RF 1.0PF 250V 0603 SMD
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70
Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
512K X 8 FLASH 3V PROM, 150 ns, PQCC32
512K X 8 FLASH 3V PROM, 200 ns, PDSO32
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
意法半导
STMicroelectronics N.V.
|
| EDI9F37512C45MMC EDI9F37512C55MMC |
512K x 37 Static RAM CMOS / High Speed Module
|
ETC
|
| AS5C512K8ECJ-35/H AS5C512K8ECJ-17L/H AS5C512K8ECJ- |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 12k × 8的SRAM高速SRAM和革命引脚排
LED, GRN SMT, 1206
µP-Compatible 14-Bit CMOS DAC; Package: PLCC; No of Pins: 20; Temperature Range: Commercial
Circular Connector; No. of Contacts:37; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Right Angle Plug; Insert Arrangement:28-21 RoHS Compliant: No
CAT5 STP BACKBONE CABLE STRAIGHT PIN, PLN-GRAY
512K x 8 SRAM - high speed with revolutionary pinout
|
Electronic Theatre Controls, Inc.
Austin Semiconductor
http://
|
| AS8NVLC512K32QC-45XT AS8NVLC512K32Q-25XT AS8NVLC51 |
512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage
|
Austin Semiconductor
|
| IDT70T3539MS999BCI |
HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Techn...
|
| IDT70T3539MS133BCI |
HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology, Inc.
|
| IDT70T653MS15BCI IDT70T653M IDT70T653MS10BC IDT70T |
HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IS61LV51216 IS64LV51216 |
(IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution
|
