| PART |
Description |
Maker |
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH |
4 Mbit (512K x8) SuperFlash EEPROM
4 Mbit (512K x 8) super-flash EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| A28F400BX-B |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
|
Intel Corp.
|
| CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1441AV33 CY7C1443AV33 CY7C1447AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1387D-250AXC CY7C1386D-167BGC CY7C1386D-167BGX |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1464AV33-167BGXI CY7C1464AV33-200BGXC CY7C1462 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.4 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.2 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 2M X 18 ZBT SRAM, 2.6 ns, PBGA165
2M X 18 ZBT SRAM, 3.2 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
