| PART |
Description |
Maker |
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| PUMA2F16000I-25 PUMA2F16000M-15 PUMA2F16000M-20 PU |
x32 Flash EEPROM Module
Low Noise, Regulated Charge Pump, Adjustable Output, MSOP
2-Kb I2C EEPROM for DDR2 DIMM Serial Presence Detect, TDFN
2-Kb I<sup>2</sup>C EEPROM for DDR2 DIMM Serial Presence Detect, TDFN X32号，闪存EEPROM模块
|
AMIC Technology, Corp.
|
| PUMA2E1000LM-90/X405 PUMA2E1000LI-70 PUMA2E1000I-7 |
x32 EEPROM Module X32号的EEPROM模块
|
PUI Audio, Inc.
|
| PUMA2E4001I-17 PUMA2E4001-17 PUMA2E4001M-17 |
x32 EEPROM Module X32号的EEPROM模块
|
Rohm Co., Ltd.
|
| PUMA67F16000I-25 PUMA67F16000M-15 PUMA67F16000M-20 |
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
250NS, PGA,883C; LEVEL B FULLY COMPLIANT(EEPROM)
200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
150NS, PDIP, IND TEMP(EEPROM)
150NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
NXP Semiconductors N.V.
|
| HMF51232J4V-55 HMF51232J4V-70 HMF51232J4V-120 HMF5 |
FLASH-ROM MODULE 2MByte (512K x32-Bit) - 68-Pin JLCC
|
Hanbit Electronics Co.,Ltd
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
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