PART |
Description |
Maker |
LC35256A LC35256AS LC35256AT-10 LC35256AT-70 LC352 |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 L |
256 K (32768 words x 8 bits) SRAM 256度(32768字8位)的SRAM
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC33832M LC33832ML-10 LC33832ML-70 LC33832ML-80 LC |
256K (32768word x 8bit) Pseudo-SRAM 256 K (32768 words X 8 bits) Pseudo-SRAM 256度(32768字8位)伪SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co., Ltd.
|
M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM From old datasheet system
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M5256CFP-12VLL M5M5256CFP-12VXL M5M5256CFP-15VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp. Cypress Semiconductor, Corp.
|
LC36256AML-85 LC36256AML-12 LC36256AML-70 |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8) IC-SM-256K CMOS EEPRM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
DS3902U-515 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO8
|
Maxim Integrated Products, Inc.
|
THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 2097152 WORDS x 32 BIT DYNAMIC RAM MODULE 2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE 2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IS42S32800B-6BL IS42S32800B-6BI |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
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HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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