PART |
Description |
Maker |
WKU250-10W WKT250-10W WKL250-10W WKH250-10W WKV250 |
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|300A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|300A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|300A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|300A I(T) THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|300A I(T) THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|300A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|300A I(T) THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|300A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|300A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.6KV五(无线资源管理)| 300我(翻译
|
Vicor, Corp.
|
2MBI300N-060-04 |
600V / 300A 2 in one-package
|
Fuji Electric
|
7MBP300RA060 |
IGBT-IPM(600V / 300A)
|
Fuji Electric
|
PCHMB300A6 |
IGBT MODULE Chopper 300A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
PP300B060 |
POW-R-PAK 300A / 600V H-Bridge IGBT Assembly
|
Powerex Power Semicondu... Powerex Power Semiconductors
|
SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
|
FMG2G300US60 |
600V, 300A IGBT Module (Molding Type) Molding Type Module
|
Fairchild Semiconductor
|
7010.9900.57 7010.9903.03 7010.9901.55 7010.9902.0 |
VERY FAST BLOW ELECTRIC FUSE, 0.063A, 125VAC, 125VDC, 300A (IR), SURFACE MOUNT VERY FAST BLOW ELECTRIC FUSE, 0.375A, 125VAC, 125VDC, 300A (IR), SURFACE MOUNT VERY FAST BLOW ELECTRIC FUSE, 0.125A, 125VAC, 125VDC, 300A (IR), SURFACE MOUNT VERY FAST BLOW ELECTRIC FUSE, 0.25A, 125VAC, 125VDC, 300A (IR), SURFACE MOUNT
|
SCHURTER INC
|
PCHMB300B12 PCHMB300B121 |
300A, 1200V
|
Nihon Inter Electronics Corporation
|
PHMB300B121 |
300A 1200V
|
Nihon Inter Electronics Corporation
|
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|