| PART |
Description |
Maker |
| FLM1415-6F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM5964-25DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
| FLM1414-8F |
Internally Matched Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| MGFC36V5964A MGFC36V5964A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFK38A3745 MGFK38A374511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V3436 MGFC39V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC42V7177 |
C band Internally Matched Power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
