PART |
Description |
Maker |
RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 30A/ 1200V Ultrafast Diode From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
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APT5017 APT5017SVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
RHRG30120CC FN3411 |
30A/ 1200V Hyperfast Dual Diode 30A, 1200V Hyperfast Dual Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD POWER MOS V FREDFET
|
Microsemi, Corp. Advanced Power Technology
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APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm
|
Advanced Power Technology
|
APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|