| PART |
Description |
Maker |
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| APT5017BVFR |
POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| RHRG30120 |
30A/ 1200V Hyperfast Diode
30A, 1200V Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RHRP30120 FN3409 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| APT8043SLL APT8043BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
THYRISTOR PROTECT BIDIR 30A SMB 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 800V 20A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
|
| RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching
80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
| APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW30NC120HD0710 STGW30NC120HD |
N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT
|
STMicroelectronics
|
| HFA30PB120 |
1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
