| PART |
Description |
Maker |
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| EDE5116AFSE-5C-E EDE5116AFSE-6E-E EDE5116AFSE-4A-E |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory, Inc.
|
| EDL1216AASA-75-E |
128M bits Mobile RAM
GT 5C 5#16S PIN RECP WALL RM
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| MC-242454F9-B10-BT3 MC-242454F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
| MC-242453F9-B10-BT3 MC-242453F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
| MC-242442F9-B90-BT3 MC-242442F9-B10-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
| MC-2311100F9-B90-BQ1 MC-2311100F9-B10-BQ1 MC-23111 |
MCP(16M-bit Mobile Specified RAM 4M-bit SRAM)
|
NEC
|
| EDX5116ADSE-4D-E EDX5116ADSE-3A-E EDX5116ADSE-3B-E |
512M bits XDRDRAM
|
Elpida Memory, Inc.
DRAM
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| EDX5116ACSE-3A-E EDX5116ACSE-3B-E EDX5116ACSE-3C-E |
512M bits XDR垄芒 DRAM
|
Elpida Memory
|
| EDE5104AJSE EDE5104AJSE-6E-E EDE5104AJSE-8E-E EDE5 |
512M bits DDR2 SDRAM
|
Elpida Memory
|
