| PART |
Description |
Maker |
| 2SK3524 |
N-CHANNE SILLCON POWER MOSFET
N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
|
Fuji Electric
Electronic Theatre Controls, Inc.
|
| 2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我（直）|92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我（直）|2
|
KEMET, Corp.
Electronic Theatre Controls, Inc.
|
| STK621-017 |
TENTATIVE
|
Sanyo Semicon Device
|
| P0340WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| 2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58DVG02A1FT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
|
