| PART |
Description |
Maker |
| NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| GM71C16160AJ-7 GM71CS16160ALJ-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
|
| UPD424170LLE-A80 UPD424170LLE-A10 UPD424170LLE-A70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
TE Connectivity, Ltd.
|
| TMS45160L-80DZ TMS45160L-80DGE TMS45160S-80DGE TMS |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SCHURTER AG
|
| HM51W16160AJ-6 HM51W16160ALTT-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
E-Z Hook,A Div. of Tektest, Inc.
|
| HM51W4260ALRR-10 HM51W4260ALRR-7 HM51W4260ALRR-8 H |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
x16FastPageModeDRAM
|
|
| HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MSM5416125A |
131,072-Word x16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
From old datasheet system
|
OKI
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
