| PART |
Description |
Maker |
| UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| UPD45128441G5-A80L-9JF UPD45128841G5-A80L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory
|
| UPD45128163-T UPD45128163G5-A10LT-9JF UPD45128163G |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL WTR (WIDE TEMPERATURE RANGE)
|
ELPIDA[Elpida Memory]
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| M2V28S20TP-8 M2V28S40TP-8 M2V28S30TP-8 M2V28S20TP- |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| M12S64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
