| PART |
Description |
Maker |
| Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
Siemens Semiconductor G...
|
| 2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| IKP20N65H5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| IKP08N65F5 IKP08N65F5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| 2SC3811 |
Silicon NPN epitaxial planer type(For high speed switching)
Transistor
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| H5N1503P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6020DPK10 RJL6020DPK RJL6020DPK-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPD83V-1N4148 |
High Speed Switching Diode Die 0.15 Amp, 100 Volt
|
Central Semiconductor C...
|
| FC807 |
High-Speed Switching Composite Diode Anode Common
|
SANYO[Sanyo Semicon Device]
|
| FS50SM-5A FS50SM-5A-A8 |
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation.
|
| HSM226S06 HSM226S |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
