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KBE00S009M-D411 - 1Gb NAND x 2 256Mb Mobile SDRAM x 2

KBE00S009M-D411_2358688.PDF Datasheet


 Full text search : 1Gb NAND x 2 256Mb Mobile SDRAM x 2
 Product Description search : 1Gb NAND x 2 256Mb Mobile SDRAM x 2


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PART Description Maker
KBE00S009M-D411 1Gb NAND x 2 256Mb Mobile SDRAM x 2
Samsung Electronic
K5D5657DCM-F015 K5D5657DCM-F0CL MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
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SAMSUNG[Samsung semiconductor]
Samsung Electronics
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Samsung Semiconductor Co., Ltd.
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Infineon
S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW 32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
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1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
SPANSION LLC
Spansion, Inc.
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- 256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的(128Mx72)PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
Infineon Technologies AG
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
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3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
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SIEMENS AG
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Micron Technology
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Micron Technology, Inc.
http://
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT 256Mb (64M x 4) PC133 3-3-3
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x16 SDRAM x16内存
Toshiba, Corp.
SIEMENS AG
 
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