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HM5112805TD-5HM5113805TD-5 - 128M EDO DRAM (16-Mword X 8-Bit) 8K Refresh/4K Refre

HM5112805TD-5HM5113805TD-5_2384551.PDF Datasheet


 Full text search : 128M EDO DRAM (16-Mword X 8-Bit) 8K Refresh/4K Refre
 Product Description search : 128M EDO DRAM (16-Mword X 8-Bit) 8K Refresh/4K Refre


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PART Description Maker
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
Elpida Memory
HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
Elpida Memory, Inc.
ELPIDA MEMORY INC
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
Hitachi,Ltd.
HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM511740 16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
Elpida Memory
HB56UW1673E-5F HB56UW1673E-6F HB56UW1673E-F 128MB Buffered EDO DRAM DIMM 16-Mword × 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M × 4 components)
128MB Buffered EDO DRAM DIMM 16-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 隆驴 4 components)
Elpida Memory
HB56UW3272ETK-5F HB56UW3272ETK-6F HB56UW3272ETK-F 256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword 隆驴 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M 隆驴 4 components)
Elpida Memory
HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
Hitachi Semiconductor
Hitachi,Ltd.
HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HITACHI[Hitachi Semiconductor]
HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
Hitachi Semiconductor
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
 
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HM5112805TD-5HM5113805TD-5 LPE model HM5112805TD-5HM5113805TD-5 Nation HM5112805TD-5HM5113805TD-5 Gain HM5112805TD-5HM5113805TD-5 circuit HM5112805TD-5HM5113805TD-5 ac/dc eurocard
 

 

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