| PART |
Description |
Maker |
| V62C2161024LL-55T V62C2161024LL-85T V62C2161024L V |
64K X 16 STANDARD SRAM, 100 ns, PDSO44
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| IDT71L016L70PHI IDT71L016 IDT71L016L100PH IDT71L01 |
LOW POWER 3V CMOS SRAM 1 MEG (64K x 16-BIT)
|
IDT[Integrated Device Technology]
|
| BS616UV1010AIP10 BS616UV1010DIG10 BS616UV1010ACP10 |
Ultra Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
|
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
