| PART |
Description |
Maker |
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| GMM7408200AS-7 GMM7408200AS-8 GMM7408200ASG-8 |
x40 Fast Page Mode DRAM Module X40的快速页面模式内存模
|
Panasonic, Corp.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G |
x72 Fast Page Mode DRAM Module
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
|
| HB56HW465DB-6 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
TE Connectivity, Ltd.
|
| HB56H132SB-7NL HB56H132B-7NL HB56H132B-5NL HB56H13 |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
STMicroelectronics N.V.
Analog Devices, Inc.
Altera, Corp.
|
| MT4LD164G-7BN MT4LD164G-6BN MT4LD164G-5BN MT4LDT16 |
x64 Burst EDO Page Mode DRAM Module X64的脉冲EDO页面模式内存模块
|
Cypress Semiconductor, Corp.
|
| IS41LV16100-50T IS41LV16100-50KI IS41LV16100-50TL |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| MSC2383257A MSC2383257A-XXBS16 MSC2383257A-XXDS16 |
8,388,608-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
