| PART |
Description |
Maker |
| KVR400X64C3A/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM 1024MB00MHz的复员非ECC CL3-3-3）内
|
Electronic Theatre Controls, Inc.
|
| KVR100X72C2/512 |
512MB 100MHz ECC CL2 DIMM 512MB00MHzECC的CL2的内
|
Samsung Semiconductor Co., Ltd.
|
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W83194R-39/-39A W83194R-39A |
100MHz/133 MHz Intel BX/ZX, VIA PC133 Clock Gen., 3-DIMM, with S.S.T.
100MHZ 3-DIMM CLOCK
|
Winbond Electronics
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp.
IBM Microeletronics
|
| KVR400X64C3A512 KVR400X64C3A |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| KVR400X64C3A KVR400X64C3A512 |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
Electronic Theatre Controls, Inc.
|
| HYMD232726A8J-J HYMD232726A8J-D43 HYMD232726A8J-D4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
