| PART |
Description |
Maker |
| DS1245Y-100-IND DS1245Y-120-IND DS1245YP-70 DS1245 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Samtec, Inc.
Ramtron International, Corp.
|
| DS1330BL-70-IND DS1330BL-100-IND DS1330YL-100 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| M48Z512A-70PM1NBSP M48Z512A-70PM1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
3M Company
|
| STM32L073V8 |
Ultra-low-power 32-bit MCU ARM-based Cortex-M0 , up to 192KB Flash, 20KB SRAM, 6KB EEPROM, LCD, USB, ADC, DACs
|
STMicroelectronics
|
| STM32L151C6U6 STM32L152C8T6 |
Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
|
STMicroelectronics
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
