| PART |
Description |
Maker |
| IRHM7C50SE IRHM2C50SE |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
IRF[International Rectifier]
|
| STD3NC60 STD3NC60-1 |
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMeshII MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?II MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| JANTXV2N6845 2N6845 JANTX2N6845 |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) 功率MOSFET P沟道BVdss \u003d- 100V的，的Rds（on）\u003d 0.60ohm，身份证\u003d- 4.0a上）
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
Dual Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 14-PDIP -40 to 125
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRHN8230 IRHN7230 |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| JANTXV2N6792 JANTX2N6792 |
POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)
|
IRF[International Rectifier]
|
| IRHI7360SE |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
|
IRF[International Rectifier]
|
| JANTX2N6794 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)
|
IRF[International Rectifier]
|
| RFM260 |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
|
International Rectifier
|
| JANTXV2N6790 JANTX2N6790 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A)
POWER MOSFET N-CHANNEL(BVdss=200V Rds(on)=0.80ohm Id=3.5A)
|
IRF[International Rectifier]
|
|
