| PART |
Description |
Maker |
| IRHN7C50SE IRHN2C50SE |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
IRF[International Rectifier]
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
| IRHM7460SE |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
|
IRF[International Rectifier]
|
| IRHNA7360SE |
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
|
IRF[International Rectifier]
|
| IRHM9064 |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
|
IRF[International Rectifier]
|
| JANSR2N7389 |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
International Rectifier
|
| STD5NM60 |
N-CHANNEL 600V - 0.8ohm - 5A DPAK MDmesh Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| JANTXV2N6790 JANTX2N6790 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A)
POWER MOSFET N-CHANNEL(BVdss=200V Rds(on)=0.80ohm Id=3.5A)
|
IRF[International Rectifier]
|
| IRFY440CM |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)
|
IRF[International Rectifier]
|
| IRH7450SE |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)
TRANSISTOR N-CHANNEL(BVdss=500V Rds(on)=0.51ohm Id=11A)
|
IRF[International Rectifier]
|
