| PART |
Description |
Maker |
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| MT48LC32M16A2 MT48LC128M4A2 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYB18T512161B2F-20 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
