| PART |
Description |
Maker |
| HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword ?16-bit ?4-bank/16-Mword ?8-bit ?4-bank /32-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133，电 100内存
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Ultra-High-Precision SOT23 Series Voltage Reference
POT 5K OHM 9MM HORZ NO BUSHING
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30
Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
POT 20K OHM 9MM HORZ NO BUSHING
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
http://
|
| HM5264805FTT-B60 HM5264165A60 HM5264165B60 HM52641 |
64M LVTTL interface SDRAM 133 MHz/100 MHz
|
HITACHI[Hitachi Semiconductor]
|
| HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 |
64M LVTTL interface SDRAM 133 MHz/100 MHz
|
HITACHI[Hitachi Semiconductor]
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB52RF649E1U-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM
|
Elpida Memory
|
| KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
