| PART |
Description |
Maker |
| APT30M90AVR |
POWER MOS V 300V 33A 0.090 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| SDA167HCGUF SDA167HC SDA167HCEUF SDA167HCFUF |
33A / 600 - 1000V THREE PHASE BRIDGE RECTIFIER ASSEMBLY
|
SSDI[Solid States Devices, Inc]
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10050LVR 10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT12040JLL |
POWER MOS 7 1000V 24A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT10078BLL APT10078SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 1000V 14A 0.780 Ohm
|
Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT5030AVR |
POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
