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K7R321884M - 1Mx36 & 2Mx18 QDRTM II b4 SRAM

K7R321884M_2106139.PDF Datasheet


Part No.	K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
Description	1Mx36 & 2Mx18 QDRTM II b4 SRAM
File Size	197.54K / 18 Page
Maker	SAMSUNG SEMICONDUCTOR CO. LTD.
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Full text search : 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Product Description search : 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Related Part Number

PART	Description	Maker
K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7B321825M K7B323625M K7B323625M-QC6575	Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7D321874C K7D323674C	1Mx36 & 2Mx18 SRAM	Samsung semiconductor
K7A323600M K7B323625M-QC75 K7A321800M K7A321800M-Q	1Mx36 & 2Mx18 Synchronous SRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7K3236U2C K7K3218U2C	1Mx36 & 2Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7K3236T2C K7K3218T2C	1Mx36 & 2Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A	2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q	1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 1Mx36 & 2Mx18 Flow-Through NtRAM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
K7R323682MK7R321882MK7R320882M	1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet	Samsung Electronic
K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7	1Mx36 & 2Mx18 Flow-Through NtRAM	Samsung semiconductor

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