| PART |
Description |
Maker |
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| NC7ST0204 NC7ST02_04 NC7ST02 NC7ST02L6X NC7ST02M5X |
TinyLogic HST 2-Input NOR Gate
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| NC7ST08_04 NC7ST08 NC7ST08L6X NC7ST08M5X NC7ST08P5 |
TinyLogic HST 2-Input AND Gate
|
FAIRCHILD[Fairchild Semiconductor]
|
| NC7ST86 |
TinyLogic???? HST 2-Input Exclusive-OR Gate
From old datasheet system
|
Fairchild
|
| IS45S16160G-6BLA1 IS42S16160G-6BL IS42S16160G-6BLI |
32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| GS8171DW72AC-350I GS8171DW72AC-333 GS8171DW72AC-30 |
18Mb ヒ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| IS42S16800B-7TLI |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| GS8170DD36C-333 GS8170DD36C-333I GS8170DD36C-300I |
18Mb Σ1x2Lp CMOS I/O Double Data Rate SigmaRAM
|
GSI Technology
http://
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
