PART |
Description |
Maker |
2SA2210 2SA2210-1E |
Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG
|
ON Semiconductor
|
20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST |
INPUT RECTIFIER DIODE 1200V 20A Std. Recovery Diode in a D2-Pakpackage 1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package 20ETS12/20ETS12S 800V 20A Std. Recovery Diode in a D2-Pakpackage 800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package From old datasheet system SURFACE MOUNTABLE INPUT RECTIFIER DIODE
|
InternationalRectifier IRF[International Rectifier]
|
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FGA20S120M |
1200V, 20A Shorted-Anode IGBT
|
Fairchild Semiconductor
|
NCE20G120T |
1200V, 20A, Trench NPT IGBT
|
Wuxi NCE Power Semiconductor Co., Ltd
|
FGA20N120FTD |
1200V, 20A, Field Stop Trench IGBT
|
Fairchild Semiconductor
|
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
IRG4PH20K IRG4PH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
|
IRF[International Rectifier]
|
IRG4PH50K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT) SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
2SD1615 |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|