PART |
Description |
Maker |
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
NES1823P-45 |
45 W L / S-BAND PUSH-PULL POWER GaAs MES FET 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NES1823P-140 |
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp. NEC[NEC]
|
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
SGM2014AN |
GaAs N-channel Dual Gate MES FET From old datasheet system
|
Sony
|