| PART |
Description |
Maker |
| 50WQ10G 50WQ10GTR 50WQ10GTRL 50WQ10GTRLPBF 50WQ10G |
SHCOTTKY BARRIER DIODE
|
International Rectifier
|
| EP10QY03 |
SBD JEDEC SOD 0.8 A, 30 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| RLS4148 RLS4150 RLS4448 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type
Switching diode
|
ROHM[Rohm]
|
| 02-0104-0400 02-0140-0200 |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| OM5008ST OM5009ST OM5008ST-15 |
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, SOFT RECOVERY RECTIFIER
400V 14A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package 400V 14A条高可靠性超快速分立二极管的T - 2封装
14 Amp, 400 & 600 Volts, 35 nsec trr
|
List of Unclassifed Manufacturers
Alliance Semiconductor, Corp.
List of Unclassifed Manufac...
International Rectifier
|
| KMM5364005BSWG KMM5364005BSW |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM47DM1688SBA-125E EM47DM1688SBA-150 EM47DM1688SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
