| PART |
Description |
Maker |
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SCS210AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS302AP |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AJTLL |
SiC Schottky Barrier Diode
|
ROHM
|
| SCS206AG |
SiC Schottky Barrier Diode
|
Rohm
|
