| PART |
Description |
Maker |
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| APT20SCD120BHB |
SiC Schottky Diodes
|
Microsemi
|
| APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
| APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SCS220KE2HR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
| RJS6005TDPPEJ |
SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
