| PART |
Description |
Maker |
| MRF9030LSR1 MRF9030D MRF9030LR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Motorola, Inc.
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRCXXNXX |
Micron Power Resistors
|
Allen
|
| STDH90 |
0.35 Micron STDH90 Library Introduction
|
Samsung Electronic
|
| CMOS-6 CMOS-6A CMOS-6V CMOS-6X |
1.0-MICRON CMOS GATE ARRAYS 1.0微米CMOS门阵
|
NEC, Corp.
NEC[NEC]
|
| MG2RTP |
Rad Hard 0.5 Micron Sea of Gates
|
Atmel
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| M25P40-VMC6GX M25P40-VMB6TXX M25P40-VMC6TXX M25P40 |
Micron M25P40 Serial Flash Embedded Memory
|
Micron Technology
|
| UPD966XX UPD936XX UPD946XX UPD956XX CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC[NEC]
|
| OV20880-4C OV20880-GA5A-4C |
20-Megapixel Second-Generation 1.0-Micron PureCel?Plus-S Sensor for Front-Facing Cameras
|
OmniVision Technologies...
|
| N25Q128A13ESE40E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q512A13GF840E N25Q512A83GSF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A
|
Micron Technology
|
