| PART |
Description |
Maker |
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| MRF9030LSR1 MRF9030 MRF9030D MRF9030LR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| UPD65021 UPD65100 UPD65000 UPD65004 UPD65011 UPD65 |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS UPD65000（的CMOS - 3）系微米的CMOS门阵
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS
|
NEC, Corp.
NEC[NEC]
http://
|
| CMOS-6 CMOS-6A CMOS-6V CMOS-6X |
1.0-MICRON CMOS GATE ARRAYS 1.0微米CMOS门阵
|
NEC, Corp.
NEC[NEC]
|
| MG2RTP |
Rad Hard 0.5 Micron Sea of Gates
|
Atmel
|
| 4991A |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| JS28F00AP33BFA PC28F512P33EFA PC28F512P33TFA PC28F |
Micron Parallel NOR Flash Embedded Memory (P33-65nm)
|
Micron Technology
|
| N25Q032A13ESF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q256A13E1240E N25Q256A13EF840E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A
|
Micron Technology
|
