Part Number Hot Search : 
SB320 W1900 HZM20N 2SJ498 2SD745A HCT2G1 5819SM KBP06
Product Description
Full Text Search

GT50J322 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS

GT50J322_2030863.PDF Datasheet

 
Part No. GT50J322
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS

File Size 260.03K  /  6 Page  

Maker

TOSHIBA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT50J322
Maker: TOSHIBA(东芝)
Pack: TO-3PL
Stock: 574
Unit price for :
    50: $3.32
  100: $3.16
1000: $2.99

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT50J322 Datasheet PDF Downlaod from Datasheet.HK ]
[GT50J322 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT50J322 ]

[ Price & Availability of GT50J322 by FindChips.com ]

 Full text search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
 Product Description search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS


 Related Part Number
PART Description Maker
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
MGW12N120 Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
ONSEMI[ON Semiconductor]
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
CT90AM-18 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
MMG05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW12N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP4N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
IRGP4069PBF INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
GT50J322 Capacitor GT50J322 board GT50J322 cmos GT50J322 Purpose GT50J322 Dual
GT50J322 usb circuit diagram GT50J322 电子元器件 GT50J322 state GT50J322 noise GT50J322 fet
 

 

Price & Availability of GT50J322

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.19893312454224