| PART |
Description |
Maker |
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| MCM69P737 MCM69P737TQ3.5 MCM69P737TQ3.5R MCM69P737 |
128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| K7A403601M |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| MCM63P819KZP150 MCM63P737KZP133 MCM63P819KZP133 MC |
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
| MCM63P733A |
128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
From old datasheet system
|
Motorola
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| CY7C1350G-250BGI CY7C1350G CY7C1350G-100AXC CY7C13 |
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture
Mechanism, 2-inch wide, compact, Easy Load and platen detect
Mechanism, 2-inch wide, Hi-speed, compact Easy Load
Parallel Mini Interface Board with cutter controller for 6x8MCL35x
Mechanism, ELM w/low profile cutter (full or partial cut)
Mechanism, 2-inch wide, Hi-speed, compact, rear feed and platen detect 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
Mechanism, 2-inch wide, compact Easy Load, 3V logic 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 4 ns, PBGA119
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V3576YS150PF IDT71V3576YS133PF IDT71V3576YS13 |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
|
Integrated Device Technology, Inc.
|
|
