| PART |
Description |
Maker |
| LC7151 |
C MOS Si Gate IC Meeting FCC 10-Channel Standard PLL for Cordless Telephone
|
SANYO
|
| TX4045B-D3-4.4-20.000-MS |
Fully meeting SMC (Sonet Minimum Clock) requirements
|
Raltron Electronics Corporation
|
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| APT50M50JLC APT5010JLC |
POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| ZX62D-B-5P8 ZX10-B-5S ZX10-B-SLDA ZX10-SLDB ZX40-A |
Micro-USB connectors meeting requirements of USB 2.0 Standard
|
Hirose Electric
|
| XE0068DT |
FCC Registered DAA Module with DTMF Transmitter/Decoder
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 3SK258 E001712 |
N CHANNEL DUAL GATE MOS TYPE (TV/ FM TUNER VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
