| PART |
Description |
Maker |
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1501N |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| CLE130E CLE135 CLE130W |
940nm High Efficiency GaAs/AlGaAs IREDs
UPGRADED SERIES
|
Clairex Technologies, Inc
New Jersey Semi-Conduct...
|
| MASWSS0181 MASWSS0181SMB MASWSS0181TR MASWSS0181TR |
GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
| SW-276T1 SW-276 SW-276B SW-276G |
High Power GaAs SPDT Switch DC - 3.0 GHz
|
Tyco Electronics
|
