| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的（x16）的快闪记忆2M的（x16）的移动FCRAMTM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| IS42S16100-7T IS42S16100-6T IS42S16100-10T |
x16 SDRAM x16内存
|
Integrated Silicon Solution, Inc.
|
| MT48LC16M16A2TG-75ITD |
256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
| K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X51163PC-FE K4X51163PC-LE |
32M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| HYB18T512161B2F HYB18T512161B2F-20_25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
