| PART |
Description |
Maker |
| M13S32321A-5L M13S32321A-6L M13S32321A08 |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MB81P643287-50 MB81P643287-60 |
MEMORY 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| MH64D64AKQH-75 MH64D64AKQH-10 |
294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH16D64AKQC-75 MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH64D72KLH-10 MH64D72KLH-75 |
4 /831 /838 /208-BIT (67 /108 /864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi
|
| MH28D72KLG-75 MH28D72KLG-10 |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| M13S256328A |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
