| PART |
Description |
Maker |
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| IRGC14C40LD IRGC14C40LC IRGC14C40LB IRGC14C40LBPBF |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | CHIP
14 A, 370 V, N-CHANNEL IGBT
|
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| F400R06KF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | MODULE-S 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|四楼一（c）|模块
|
Thomas
|
| ITS18F03B |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 36A I(C) | TO-220AB 晶体管| IGBT的|正陈| 300V五（巴西）国际消费电子展|6A一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| FF300R12KF2 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 300A I(C) | M:HL093HW060 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 300一（c）|米：HL093HW060
|
Infineon Technologies AG
|
| FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 75A条一（c）|米：HL093HD5.6
|
Infineon Technologies AG
|
| IXGH24N60C |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
