| PART |
Description |
Maker |
| APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT
Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| APTGF90DA60CT1G |
110 A, 600 V, N-CHANNEL IGBT
Boost chopper NPT IGBT SiC Chopper diode
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| CM75TF-12H |
Six-IGBT IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IXSH24N60B IXST24N60BD1 IXSH24N60BD1 |
48 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
48 A, 600 V, N-CHANNEL IGBT, TO-268AA TO-268, 3 PIN
High Speed IGBT
|
IXYS Corporation
IXYS, Corp.
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IXSQ10N60B2D1 IXSH10N60B2D1 |
20 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN
20 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS CORP
|
| SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT
Ultra-Fast IGBT
Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| HGTG30N60A4 |
600V, SMPS Series N-Channel IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-247
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FGA40N60UFDTU FGA40N60UFDTUNL |
Ultrafast IGBT; Package: TO-3P; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
