| PART |
Description |
Maker |
| ZXGD3005E6 |
10A (PEAK) GATE DRIVER IN SOT26
|
Diodes Incorporated
|
| ZXGD3006 ZXGD3006E6 |
High current 40V Gate Driver reduces IGBT switching losses
|
Diodes Incorporated
|
| OM9402SP |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a SP-10A package
|
International Rectifier
|
| S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V.
10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
ETC[ETC]
|
| RQ3G100GNTB |
Nch 40V 10A Power MOSFET
|
ROHM
|
| D10SC4MR |
Schottky Rectifiers (SBD) (40V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| SBM1040-13-F |
DIODE SCHOTTKY 40V 10A PWRMITE3 10 A, 40 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| TLP590B07 TLP590B |
Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver
|
Toshiba Semiconductor
|
| Z86L7908PSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA 8位微控制
|
INTEGRAL JOINT STOCK COMPANY
|
