| PART |
Description |
Maker |
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| LH28F160S3HB-L13 LH28F160S3R-L13 LH28F160S3HD-L13 |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS |专科| 56PIN |塑料
EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 56PIN |塑料
|
Sharp, Corp.
M.S. Kennedy, Corp.
|
| IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| IS45S16400E-6TLA1 IS45S16400E-7TLA1 IS45S16400E-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS45S16400E |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
| TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
|
Toshiba Semiconductor
Toshiba, Corp.
|
| TC58FVT641XB-70 TC58FVB641XB-70 TC58FVB641FT-70 TC |
CAT5E PATCH CORD 15 FOOT BLACK
64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| IS42S16400E-7T IS42S16400E-6TLI IS42S16400E-7TL IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
