| PART |
Description |
Maker |
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| NT5SV8M8DT NT5SV8M8DT-6K NT5SV8M8DT-7 NT5SV8M8DT-7 |
64Mb Synchronous DRAM
|
ETC[ETC]
|
| HY57V641620HGTP-5I HY57V641620HGTP-7 |
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 64Mb
|
HYNIX SEMICONDUCTOR INC
|
| EM48BM3244VTA-7FE EM482M3244VTA-6F |
64Mb (512K×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| M377S2950MT3 M377S2950MT3-C1H |
128M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| H57V1262GTR |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HSD16M64D16A HSD16M64D16A-10 HSD16M64D16A-10L HSD1 |
Synchronous DRAM Module 128Mbyte (16Mx64bit), DIMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HSD16M32F4VP-10L HSD16M32F4VP |
Synchronous DRAM Module, 64Mbyte ( 16M x 32-Bit ) SMM based on 2Mx16Bitx4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|
