| PART |
Description |
Maker |
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320BB M28W320BB100N1T M28W320BB100N6T M28W320B |
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320FCT90ZB6F M28W320FCB M28W320FCB10N6E M28W32 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320FCB100N6E M28W320FCB100N6F M28W320FCB100ZB6 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29W160DB M29W160DB70M1T M29W160DB70M6T M29W160DB7 |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29W320DB70N6AT M29W320DB70N6E M29W320DB70ZA6 M29W |
32 MBIT (4MB X8 OR 2MB X16 BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29W160EB |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory
32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导
STMicroelectronics
|
| M28W320BB 7584 M28W320BB100N6T M28W320BB100ZB1T M2 |
Quadruple ESD transient voltage suppressor - Cd max.: 240 pF; IRM max: 2A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 5.6 V; VRWM: 3 V
Quadruple ESD transient voltage suppressor - Cd max.: 48 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
CLAMP
32 Mbit (2Mb x16/ Boot Block) 3V Supply Flash Memory
From old datasheet system
32 MBIT (2MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
意法半导
STMicroelectronics
|
| M58LW032A90ZA6T M58LW032A90ZA1T M58LW032A90N6T M58 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory 32兆位Mb x16插槽，统一座，突发3V电源快闪记忆
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
