| PART |
Description |
Maker |
| KVR400X64C3A/512 |
512MB 64M x 64-Bit DDR400
|
Kingston Technology
|
| KVR133X64C3L/512 |
512MB 64M x 64-Bit PC133 CL3 Low Profile 168-Pin DIMM
|
Kingston Technology
|
| KVR667D2N5/512 |
512MB 64M x 64-Bit DDR2-667 CL5 240-Pin DIMM
|
Kingston
|
| IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http://
Integrated Silicon Solution, Inc
|
| KVR400X64C3A/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM 1024MB00MHz的复员非ECC CL3-3-3）内
|
Electronic Theatre Controls, Inc.
|
| EBE52UD6AFSA EBE52UD6AFSA-6E-E EBE52UD6AFSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
Elpida Memory, Inc.
|
| EBE51RD8ABFA-5C-E EBE51RD8ABFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
Elpida Memory, Inc.
|
| EBE51ED8AGFA-6E-E EBE51ED8AGFA EBE51ED8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBE51ED8AEFA-5C-E EBE51ED8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
LJT 5C 5#16 SKT RECP
|
Elpida Memory, Inc.
|
