| PART |
Description |
Maker |
| MJE34003 MJE350 MJE340 |
COMPLEMETARY SILICON POWER TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
|
| TIP131 |
Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体
|
意法半导
|
| 1N5070 1N5075 1N5078 1N5100 1N5105 1N5103 1N5104 1 |
POWER ZENERS
45 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
180 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 160 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 36 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 14 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 16 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 100PF 100V 5% NP0(C0G) RAD.20 .20X.20 TR-13 20 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Power Zeners. 3 Watt 电源齐纳基准源3瓦特
POWER ZENERS 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 320 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
FUSED-IN-GLASS METALLARGICALTY BONDED 3 WAIT ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE
TE Connectivity, Ltd.
Bourns, Inc.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
POWER ZENERS
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204
SWITCHMODE™ Series NPN Silicon Power Transistor
SWITCHMODE Series NPN Silicon Power Transistor
SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
| BUV21 BUV21_D ON0257 |
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc.
ON Semiconductor
|
| 2SD2163 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
| 2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
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